CYPRESS, Calif.--(BUSINESS WIRE)--Mitsubishi Electric US, Inc. announced a new version of its 2.0kV LV100 insulated-gate bipolar transistor (IGBT) module specifically designed for photovoltaic (PV) ...

NUREMBERG, Germany--(BUSINESS WIRE)--PCIM Europe – Power Integrations (NASDAQ: POWI), the leader in gate driver technology for medium- and high-voltage inverter applications, today announced the SCALE ...

Microchip Technology Inc. has announced a portfolio of IGBT 7 devices housed in different packages, offering multiple topologies and current and voltage ranges. Featuring increased power capability, ...

The need to mitigate climate change is driving a need to electrify our infrastructure, vehicles, and appliances, which can then be charged and powered by renewable energy sources. The most visible and ...

As the relatively mature wire-bonding technology continues to advance, it has become fully suitable for processing automotive silicon-based IGBT modules, and SiC (silicon carbide) power modules and is ...

1SP0635 SCALE-2 Plug-and-Play drivers safely and reliably drive 130 x 140 mm and 190 x 140 mm high-voltage and high-power IGBT modules ranging from 1200 V to 3300 V. They are optimised for use in high ...

The 1200V / 300A Half-Bridge IGBT is rated for 450A continuous DC current (Tj=90°C) based on Trench Gate Field Stop (TG-FS) technology. And it is housed in the CPAK-EDC package with a copper baseplate ...

With the increasing demand for improving system efficiencies, the development of the low loss, high current, high voltage, rugged power modules for high frequency power electronic applications is of ...

(Image courtesy of Elsevier Publishing). Who else would you want to author a book about the IGBT (insulated gate bipolar transistor) than its inventor, Dr. B. Jayant Baliga? This invention is widely ...

Hitachi Energy, a global leader in electrification, and Pakal Technologies, a cutting-edge innovator in silicon power semiconductor design, announced a collaboration to advance shared value creation ...