A technical paper titled “Characterizing semiconductor devices for all-electric aircraft” was published by researchers at University of Strathclyde (Glasgow) and Airbus UpNext. “Cryogenic propulsion ...

TOKYO, JAPAN. Saki Corp. has announced the introduction of its 3D-CT automated X-ray inspection (AXI) system designed specifically for the inspection and measurement of insulated gate bipolar ...

System-in-package (SiP) and other advanced packaging technologies are putting more components together in tighter spaces than previously seen. Often these packages are contained in a module, which is ...

Dissipated heat in a junction is one of the major effects that can influence the reliability of die-attach materials used in an IGBT’s chip. Power cycling tests are ideal to mimic the lifecycle of a ...

Power Integrations launched a family of ASIL B-qualified, dual-channel, plug-and-play gate-driver boards for both SiC MOSFETs and silicon IGBTs. At PCIM Europe, Power Integrations announced the SCALE ...

According to independent consulting and research organization IDTechEX, any vehicle manufacturer without a compelling line up of electric vehicles by 2025 is signing its “death warrant.” It’s not ...

The 1200V / 300A Half-Bridge IGBT is rated for 450A continuous DC current (Tj=90°C) based on Trench Gate Field Stop (TG-FS) technology. And it is housed in the CPAK-EDC package with a copper baseplate ...