Figure1: Cross-section-TEM image of an active photodiode (PD) layer transferred to a model signal transfer device (labeled here as a "mount" device). Image taken before subsequent removal of cleave ...
Figure 1. A model INL 8 layer metal network assembled from M1, M2, and M4 layers from a 32nm CMOS logic circuit. The INL is fabricated on a Si substrate by 32nm capable BEOL tool sets. The total ...
Also, when compared to interposer stacking using 2.5D packaging methods, the SiGen approach provides an order of magnitude higher signal bandwidth from shorter and denser vertical TSV and metal signal ...
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