A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...
New power applications are perfect for GaN transistors. They are incredibly efficient, operate at very high speeds, and have compact dimensions. Any electricity project can be built with them with ...
CAMBRIDGE, England--(BUSINESS WIRE)--Cambridge GaN Devices (CGD), a leading innovator in gallium nitride (GaN) power devices, has successfully closed a $32 million Series C funding round. The ...
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Researchers achieve record-breaking RF GaN-on-Si transistor performance for high-efficiency 6G power amplifiers
Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility ...
Researchers at Intel Foundry have demonstrated a gallium nitride (GaN) chiplet technology built on 300 mm GaN-on-silicon wafers, marking a significant leap forward in semiconductor design. Presented ...
This article is part of the TechXchange: Gallium Nitride (GaN). Gallium nitride (GaN) continues to gain ground in power electronics. Not only does the technology eliminate reverse recovery, but it ...
SiC role is expanding across the new energy vehicles, rail traction, industrial motors, renewable grid connection, and ...
The integration of a 3C-SiC layer between GaN and diamond significantly reduces thermal resistance at the interface and improves heat dissipation, allowing for better performance. Researchers at Osaka ...
BENGALURU: Researchers from the Indian Institute of Science (IISc) have reported a breakthrough in the design of gallium nitride (GaN) power transistors, a development that could help accelerate the ...
A new gallium nitride (GaN) solution claims to take the technology well over its current limitations of 100 kHz to facilitate hard switching at high voltages for motor drive systems serving ...
A research team has fabricated a gallium nitride (GaN) transistor using diamond, which of all natural materials has the highest thermal conductivity on earth, as a substrate, and they succeeded in ...
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