DURHAM, N.C.--(BUSINESS WIRE)--Cree, Inc. (Nasdaq: CREE) announces the qualification and production release of two new GaN processes: G40V4, a 0.25µm process with operating drain voltage up to 40V, ...
Gallium nitride (GaN) semiconductors can now be grown without ammonia, a toxic chemical that needs a sophisticated detoxifying system before it can be released into the atmosphere. The new technique ...
SARATOGA, Calif.--(BUSINESS WIRE)--Mojo Vision, the high-performance micro-LED company, today announced an important development and process milestone with the successful light-up of the first-ever ...
Gallium nitride is starting to make broader inroads in the lower-end of the high-voltage, wide-bandgap power FET market, where silicon carbide has been the technology of choice. This shift is driven ...
Taiwanese pure-play foundry WIN Semiconductors has announced the beta release of its robust mmWave GaN-on-SiC technology, NP12-0B. At the core of this platform is a 0.12-µm gate RF GaN HEMT process ...
Gallium nitride (GaN) is a binary III/V semiconductor seen as a potential successor to silicon. GaN has a wider bandgap than silicon, meaning it can maintain higher voltages in electronic devices. 1 ...
CHRIS SCHODT: Silicon is over, or is it? Probably not. But there is some exciting tech out there that may change your devices all the way from laptops to electric cars. Welcome to "Upscaled," our ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results