Remote epitaxy has been gaining attention in the field of semiconductor manufacturing for growing thin films that copy the crystal structure of the template, which can later be exfoliated to form ...

A new technical paper titled “Lateral Tunnel Epitaxy of GaAs in Lithographically Defined Cavities on 220 nm Silicon-on-Insulator” was published by researchers at Cardiff University and University of ...

Researchers grow single-crystal GaN films on amorphous glass using a chemically converted molybdenum nitride buffer, removing the need for crystalline substrates in epitaxy (Nanowerk Spotlight) The ...

This technique offers unparalleled control over the thickness, composition, and doping levels of the layers it produces, features that are critical for advanced electronic and photonic devices. The ...

Molecular beam epitaxy (MBE) is an experimental technique utilized for layer-by-layer growth of thin films of various quantum materials. Out of the variety of thin film growth techniques available, ...

Remote epitaxy, a promising technology for thin film growth and exfoliation, suffers from substrate damage under harsh conditions. In this regard, researchers recently investigated the effect of ...