Next-gen memory designed as a lower-cost, lower-power HBM alternative for AI workloads ...

NEO Semiconductor, a leading innovator in advanced AI and memory technologies, today announced successful proof-of-concept (POC) results for its 3D X-DRAM™ technology, marking a major milestone toward ...

Companies Preview 10th Generation 3D Flash Memory Technology Setting A New Benchmark for Performance, Power Efficiency and Bit Density Unveiled at ISSCC 2025, the new 3D flash memory innovation, ...

NAND flash technology is on a roll with advancements in cell structure and the subsequent boost in storage density. That allows this non-volatile-memory (NVM) chip to deliver faster throughput and ...

Samsung Electronics is keenly exploring "hafnia ferroelectrics" as a next-generation NAND flash material, with the hope that this new material will enable stacking over 1,000 layers of 3D NAND and ...

FREMONT, Calif., July 31, 2024 /PRNewswire/ -- Lam Research Corp. (Nasdaq: LRCX) today extended its leadership in 3D NAND flash memory etching with the introduction of Lam Cryo™ 3.0, the third ...

On Tuesday, Samsung Electronics Co (OTC:SSNLF) announced that it has started mass production of the world’s most advanced 286-layer NAND flash memory chips, which offer increased data storage capacity ...

Traditional planar NAND flash has had a long and illustrious run, but its time is over. Multiple manufacturers have announced they have no plans to pursue 2D NAND below the 15nm process node. Share on ...

TL;DR: Samsung Electronics has developed a 400-layer NAND technology, surpassing SK hynix's 321-layer NAND. This positions Samsung as a leader in NAND flash technology. The 400-layer NAND will enter ...

Western Digital and Toshiba have jointly announced that they have begun initial production on 64-layer 3D NAND in 512Gb capacities. This new pilot production at the company's fab in Yokkaichi, Japan, ...